| PART |
Description |
Maker |
| BGA915N7 |
Silicon Germanium GPS Low Noise Amplifier
|
Infineon Technologies AG
Infineon Technologies A...
|
| BGA628L7 |
Silicon Germanium Wide Band Low Noise Amplifier
|
Infineon Technologies AG
|
| RQG1001UP-TL-E |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics Corporation.
|
| RQG1003UQ-TL-E |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics Corporation.
|
| BGA622L7 |
Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection
|
Infineon Technologies AG
|
| RPM6937-V4 RPM6938-V4 |
Lead Frame Remote Control Receiver Modules (5V with superior anti-nois characteristics Type)
|
ROHM
|
| BFP740 |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| S1M8662AX01-F0T0 S1M8662A DSS1M8662A |
RX IF/BBA WITH GPS
RX IF / BBA WITH GPS
CDMA/PCS/GPS Triple Mode IF/ baseband IC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4
|
Infineon
|
| BGA715N7 |
16/32-Bit Single-Chip Microcontroller
Silicon Germanium Low Noise Amplifier
|
Infineon Technologies AG
Infineon Technologies A...
|
| DSS1M8662A S1M8662AX01-F0T0 |
RX IF/BBA WITH GPS
CDMA/PCS/GPS Triple Mode IF/ baseband IC 码分多址/全球定位系统三模式中基带IC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
